Datasheet > CRSS070N15NZ-Q

CRSS070N15NZ-Q

更新时间： 2024-03-03 10:10:08

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1506K
描述
TO-263(或D2PAK)

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数据手册

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CRSS070N15NZ-Q 数据手册

CRSS070N15NZ-Q

华润微电子(重庆)有限公司

SkyMOS1 N-MOSFET 150V, 5.9mΩ, 155A

Features

Product Summary

V_DS

150V

• Uses CRM(CQ) advanced SkyMOS1 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• AEC-Q101 Criteria Qualified

• 175°C Operating Temperature

R_DS(on)

I_D

5.9mΩ

155A

100% Avalanche Tested

100% DVDS Tested

Applications

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRSS070N15NZ-Q

Package Marking and Ordering Information

Part #

Marking

Package

TO-263

Reel Size

Tape Width

N/A

Qty

Packing

Tape

800pcs

CRSS070N15NZ-Q CRSS070N15NZ

N/A

1000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

150

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

155

160

I_D

110

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

620

Avalanche energy, single pulse ( I_AS= 36A, Rg=25Ω)

Gate-Source voltage

324

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

333

°C

T_j, T _stg

Operating junction and storage temperature

-55...+175

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

260

°C

※. Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 36A, Vgs=10V.

Rev4.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...10

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