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CPH5703

更新时间： 2024-02-27 14:24:07
品牌 Logo 应用领域
三洋 - SANYO 转换器
页数 文件大小 规格书
5页 54K
描述
DC/DC Converter Applications

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中文翻译

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CPH5703 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G5
针数：5Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.55
最大集电极电流 (IC)：3 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE)：200
JESD-30 代码：R-PDSO-G5元件数量：1
端子数量：5封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最大功率耗散 (Abs)：0.9 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：380 MHz
Base Number Matches：1

CPH5703 数据手册

 浏览型号CPH5703的Datasheet PDF文件第2页浏览型号CPH5703的Datasheet PDF文件第3页浏览型号CPH5703的Datasheet PDF文件第4页浏览型号CPH5703的Datasheet PDF文件第5页 
Ordering number:ENN6092  
TR : NPN Silicon Epitaxial Planar Transistor  
SBD : Schottky Barrier Diode  
CPH5703  
DC/DC Converter Applications  
Features  
Package Dimensions  
unit:mm  
· Composite type with a NPN transistor and a Schottky  
barrier diode contained in one package facilitating  
high-density mounting.  
2156  
[CPH5703]  
· The CPH5703 consists of two chips encapsulated in a  
package which are equivalent to the CPH3205 and  
the SB05-05CP, respectively.  
· Ultrasmall-sized package permitting applied sets to  
be made small and slim (0.9mm).  
2.9  
0.15  
5
4
3
2
0.05  
1
0.95  
0.4  
0.4  
1 : Cathode  
2 : Collector  
3 : Base  
4 : Emitter  
5 : Anode  
SANYO : CPH5  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[TR]  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
60  
50  
6
V
V
CBO  
V
CEO  
V
V
EBO  
I
3
A
C
Collector Current (Pulse)  
Base Current  
I
6
A
CP  
I
600  
0.9  
150  
mA  
W
˚C  
˚C  
B
Mounted on a ceramic board (600mm2×0.8mm)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
[SBD]  
P
C
Tj  
Tstg  
–55 to +125  
Repetitive Peak Reverse Voltage  
Non-repetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Current  
V
50  
V
V
RRM  
V
55  
500  
RSM  
I
mA  
A
O
I
50Hz sine wave, 1 cycle  
5
FSM  
˚C  
˚C  
Junction Temperature  
Storage Temperature  
Tj  
–55 to +125  
–55 to +125  
Tstg  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
71299TS (KOTO) TA-1726 No.6092–1/5  
12345

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