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CPH5705 PDF预览

CPH5705

更新时间: 2024-02-13 16:54:58
品牌 Logo 应用领域
三洋 - SANYO 晶体转换器晶体管开关光电二极管
页数 文件大小 规格书
5页 45K
描述
DC / DC Converter Applications

CPH5705 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.55
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:30 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G5
元件数量:1端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):380 MHz
Base Number Matches:1

CPH5705 数据手册

 浏览型号CPH5705的Datasheet PDF文件第2页浏览型号CPH5705的Datasheet PDF文件第3页浏览型号CPH5705的Datasheet PDF文件第4页浏览型号CPH5705的Datasheet PDF文件第5页 
Ordering number : ENN6591  
TR : PNP Epitaxial Planar Silicon Transistor  
SBD : Sohottky Barrier Diode  
CPH5705  
DC / DC Converter Applications  
Features  
Package Dimensions  
unit : mm  
Composite type with a PNP transistor and a Schottky  
barrier diode contained in one package facilitating  
high-density mounting.  
2156  
[CPH5705]  
The CPH5705 consists of two chips which are  
equivalent to the CPH3109 and the SBS004, respec-  
tively.  
Ultrasmall package facilitates miniaturization in end  
products.  
2.9  
0.15  
5
4
3
2
0.05  
1
0.95  
0.4  
0.4  
1 : Cathode  
2 : Collector  
3 : Base  
4 : Emitter  
5 : Anode  
Specifications  
SANYO : CPH5  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
[TR]  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
V
--30  
--30  
-- 5  
V
V
CBO  
CEO  
EBO  
V
I
-- 3  
A
C
Collector Current (Pulse)  
Base Current  
I
-- 5  
A
CP  
I
B
--600  
0.9  
150  
mA  
W
°C  
°C  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
[SBD]  
P
Mounted on a ceramic board (600mm20.8mm)  
C
Tj  
Tstg  
--55 to +125  
Repetitive Peak Reverse Voltage  
Non-repetitive Peak Reverse Surge Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Storage Temperature  
Marking : PE  
V
15  
V
V
RRM  
V
15  
1
RSM  
I
O
A
I
50Hz sine wave, 1cycle  
10  
A
FSM  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Tstg  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
61500 TS IM TA-2903 No.6591-1/5  

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