Datasheet > CP331-CZT2000-WS

CP331-CZT2000-WS

更新时间： 2024-11-04 21:10:47

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CP331-CZT2000-WS 技术参数

PROCESS CP331

Power Transistor

NPN - High Voltage Darlington Transistor Chip

PROCESS DETAILS

Die Size

39.4 x 39.4 MILS

Die Thickness

9.1 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

7.9 x 7.9 MILS

Al-Si - 30,000Å

Au-As - 18,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

11,055

PRINCIPAL DEVICE TYPE

CZT2000

BACKSIDE COLLECTOR

R0 (19-September 2011)

www.centralsemi.com

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