Datasheet > CP348-2N5154

CP348-2N5154

更新时间： 2024-11-22 14:55:43

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	511K
描述
80V,5A,1W Bare die,82.677 X 82.677 mils,Transistor-Bipolar Power (>1A)

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CP348-2N5154 数据手册

CP348-2N5154

NPN - High Current Transistor Die

www.centralsemi.com

The CP348-2N5154 is a silicon NPN transistor designed for high current applications.

MECHANICAL SPECIFICATIONS:

Die Size

82 x 82 MILS

9.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

13 x 17 MILS

13 x 25 MILS

Al-Si – 40,000Å

Ti/Ni/Ag – 2,000Å/3,000Å/20,000Å

2.0 MILS

5 INCHES

Gross Die Per Wafer

2,449

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

100

6.0

2.0

°C

CBO

CEO

EBO

T , T

Operating and Storage Junction Temperature

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=60V

=100V

=40V

=5.0V

=6.0V

1.0

µA

CES

CEO

EBO

CEO

CE(SAT)

BE(SAT)

BE(ON)

µA

I =100mA

I =2.5A, I =250mA

0.75

1.5

1.45

2.2

I =5.0A, I =500mA

I =2.5A, I =250mA

I =5.0A, I =500mA

=5.0V, I =250mA

=5.0V, I =50mA

=5.0V, I =2.5A

=5.0V, I =5.0A

=5.0V, I =0.1A, f=1.0kHz

=10V, I =0, f=1.0MHz

=30V, I =5.0A, I =0.5A

=30V, I =5.0A, I =I =0.5A

1.45

200

250

µs

0.5

1.3

off

B1 B2

R0 (6-June 2016)

12 3 4

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