Datasheet > CP341V-CMPT3410

CP341V-CMPT3410

更新时间： 2024-11-26 14:54:19

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	872K
描述
25V,1A,350mW Bare die,17.720 X 17.720 mils,Transistor-Small Signal (<=1A)

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CP341V-CMPT3410 数据手册

PROCESS CP341V

Small Signal Transistors

NPN - Low V

Transistor Chip

CE(SAT)

PROCESS DETAILS

Process

EPITAXIAL PLANAR

18 x 18 MILS

7.1 MILS

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

3.8 x 3.8 MILS

Al/Si - 30,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

54,330

PRINCIPAL DEVICE TYPES

CMLT3410

CMPT3410

CMST3410

CMUT3410

CXT3410

R3 (25-May 2011)

www.centralsemi.com

12 3 4

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