Datasheet > CP337V-2N4014

CP337V-2N4014

更新时间： 2024-11-26 14:54:55

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	605K
描述
50V,500mA,360mW Bare die,29.134 X 29.134 mils,Transistor-Small Signal (<=1A)

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CP337V-2N4014 数据手册

CP337V-2N4014

NPN - General Purpose Transistor Die

www.centralsemi.com

The CP337V-2N4014 is a silicon NPN transistor designed for general purpose switching

applications.

MECHANICAL SPECIFICATIONS:

Die Size

29 x 29 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

11.8 x 4.5 MILS

Al – 30,000Å

Au-As – 13,000Å

2.0 MILS

4 INCHES

Gross Die Per Wafer

13,192

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Peak Collector Current

1.0

2.0

T , T

Operating and Storage Junction Temperature

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=60V

1.7

µA

CBO

CES

=80V

µA

I =10µA

6.0

CBO

I =10µA

CES

I =10mA

CEO

I =10µA

EBO

I =10mA, I =1.0mA

0.25

0.26

0.40

0.52

0.80

0.95

0.76

0.86

1.1

CE(SAT)

BE(SAT)

I =100mA, I =10mA

I =300mA, I =30mA

I =500mA, I =50mA

I =800mA, I =80mA

I =1.0A, I =100mA

I =10mA, I =1.0mA

I =100mA, I =10mA

I =300mA, I =30mA

I =500mA, I =50mA

0.80

1.1

I =800mA, I =80mA

1.5

I =1.0A, I =100mA

1.7

R0 (6-June 2016)

12 3 4 5

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