Datasheet > CP336V-2N5550

CP336V-2N5550

更新时间： 2024-11-22 14:54:27

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CENTRAL		/
页数	文件大小	规格书
4页	864K
描述
140V,600mA,625mW Bare die,17.323 X 17.323 mils,Transistor-Small Signal (<=1A)

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CP336V-2N5550 数据手册

CP336V-2N5550

NPN - High Voltage Transistor Die

www.centralsemi.com

The CP336V-2N5550 is a silicon NPN transistor designed for high voltage, general purpose

applications.

MECHANICAL SPECIFICATIONS:

Die Size

17.3 x 17.3 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.9 x 3.9 MILS

Al-Si – 17,000Å

Au – 12,000Å

1.73 MILS

6 INCHES

Gross Die Per Wafer

79,877

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

160

140

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Operating and Storage Junction Temperature

600

°C

T , T

stg

-65 to +150

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=100V

100

CBO

=4.0V

EBO

I =100µA

160

140

6.0

CBO

CEO

I =1.0mA

I =10µA

EBO

I =10mA, I =1.0mA

0.15

0.25

1.0

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

MHz

=10V, I =0, f=1.0MHz

R0 (14-September 2021)

12 3 4

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