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CP341V

更新时间: 2024-11-21 03:26:23
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
1页 43K
描述
Small Signal Transistors NPN - Low VCE(SAT) Transistor Chip

CP341V 数据手册

  
PROCESS CP341V  
Small Signal Transistors  
NPN - Low V  
Transistor Chip  
CE(SAT)  
PROCESS DETAILS  
Process  
Epitaxial Planar  
18 x 18 MILS  
7.1 MILS  
Die Size  
Die Thickness  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
3.8 x 3.8 MILS  
3.8 x 3.8 MILS  
Al/Si - 30,000Å  
Au - 12,000Å  
GEOMETRY  
GROSS DIE PER 5 INCH WAFER  
54,330  
PRINCIPAL DEVICE TYPES  
CMLT3410  
CMPT3410  
CMST3410  
CMUT3410  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R0 (5- January 2006)  

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