Datasheet > CP337V

CP337V

更新时间： 2024-11-06 03:26:23

品牌	Logo	应用领域
CENTRAL		晶体开关晶体管
页数	文件大小	规格书
1页	36K
描述
Small Signal Transistors NPN - Saturated Switch Transistor Chip

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CP337V 数据手册

PROCESS CP337V

Small Signal Transistors

NPN - Saturated Switch Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

29 x 29 MILS

Die Size

Die Thickness

7.1 MILS

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

11.8 x 4.5 MILS

Al -

30,000Å

Au-As - 13,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

13,192

PRINCIPAL DEVICE TYPES

2N3725A

2N4014

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R0 (26-August 2005)

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型号	品牌	获取价格	描述	数据表
CP337V-2N3725	CENTRAL	获取价格	50V,1.2A,800mW Bare die,29.134 X 29.134 mils,Transistor-Bipolar Power (>1A)
CP337V-2N4013	CENTRAL	获取价格	Small Signal Bipolar Transistor,
CP337V-2N4014	CENTRAL	获取价格	50V,500mA,360mW Bare die,29.134 X 29.134 mils,Transistor-Small Signal (<=1A)
CP34063	CERAMATE	获取价格	1.5A,Step-Up/Down/Inverting Switching Regulators
CP34063(8PDIP)	CERAMATE	获取价格	Switching Regulator/Controller
CP34063A	CERAMATE	获取价格	1.5A,Step-Up/Down/Inverting Switching Regulators
CP34063N	CERAMATE	获取价格	1.5A,Step-Up/Down/Inverting Switching Regulators
CP341V	CENTRAL	获取价格	Small Signal Transistors NPN - Low VCE(SAT) Transistor Chip
CP341V_10	CENTRAL	获取价格	Small Signal Transistors NPN - Low VCE(SAT) Transistor Chip
CP341V-CMPT3410	CENTRAL	获取价格	25V,1A,350mW Bare die,17.720 X 17.720 mils,Transistor-Small Signal (<=1A)