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CP337V-2N3725 PDF预览

CP337V-2N3725

更新时间: 2024-11-26 14:55:39
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
6页 682K
描述
50V,1.2A,800mW Bare die,29.134 X 29.134 mils,Transistor-Bipolar Power (>1A)

CP337V-2N3725 数据手册

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CP337V-2N3725  
NPN - General Purpose Transistor Die  
www.centralsemi.com  
The CP337V-2N3725 is a silicon NPN transistor designed for general purpose switching  
applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
29 x 29 MILS  
7.1 MILS  
Die Thickness  
Base Bonding Pad Size  
Emitter Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
11.8 x 4.5 MILS  
11.8 x 4.5 MILS  
Al – 30,000Å  
Au-As – 13,000Å  
2.0 MILS  
4 INCHES  
Gross Die Per Wafer  
13,192  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Operating and Storage Junction Temperature  
SYMBOL  
UNITS  
V
V
V
A
A
°C  
A
V
V
V
80  
50  
6.0  
1.2  
1.75  
CBO  
CEO  
EBO  
C
CM  
I
I
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=80V  
=60V  
=80V  
10  
µA  
B
CE  
CB  
CE  
1.7  
10  
µA  
µA  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CBO  
CES  
BV  
BV  
BV  
BV  
I =10µA  
80  
80  
50  
6.0  
CBO  
C
I =10µA  
CES  
C
I =10mA  
CEO  
C
I =10µA  
EBO  
E
V
V
V
V
V
V
V
V
V
V
V
V
I =10mA, I =1.0mA  
0.25  
0.26  
0.40  
0.52  
0.80  
0.95  
0.76  
0.86  
1.1  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(SAT)  
BE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =100mA, I =10mA  
C
B
I =300mA, I =30mA  
C
B
I =500mA, I =50mA  
C
B
I =800mA, I =80mA  
C
B
I =1.0A, I =100mA  
C
B
I =10mA, I =1.0mA  
C
B
I =100mA, I =10mA  
C
B
I =300mA, I =30mA  
C
B
I =500mA, I =50mA  
0.80  
1.1  
C
B
I =800mA, I =80mA  
1.5  
C
B
I =1.0A, I =100mA  
1.7  
C
B
R0 (6-June 2016)  

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