Datasheet > CP325V-MJE181

CP325V-MJE181

更新时间： 2024-09-14 14:50:47

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	855K
描述
60V,3A,1.5W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)

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CP325V-MJE181 数据手册

PROCESS CP325V

Small Signal Transistor

NPN - Switching Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

40 x 40 MILS

7.1 MILS

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

7.9 x 8.7 MILS

9.0 x 14 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

6,936

GROSS DIE PER 5 INCH WAFER

10,454

PRINCIPAL DEVICE TYPE

2N5320

R2 (19-September 2011)

www.centralsemi.com

12 3 4

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型号	品牌	获取价格	描述	数据表
CP325V-MJE182	CENTRAL	获取价格	80V,3A,1.5W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)
CP3263,512	NXP	获取价格	P89LPC930FDH
CP326X-CMLDM7120	CENTRAL	获取价格	1A,20V Bare die,33.500 X 25.600 mils,MOSFET
CP327V	CENTRAL	获取价格	Small Signal Transistor NPN - Silicon Darlington Transistor Chip
CP327V-2N5308	CENTRAL	获取价格	Small Signal Bipolar Transistor,
CP327V-CMLT6427E	CENTRAL	获取价格	500mA,40V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)
CP327V-CXTA27	CENTRAL	获取价格	500mA,60V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)
CP327V-CZTA27	CENTRAL	获取价格	Small Signal Bipolar Transistor,
CP327V-D40C7	CENTRAL	获取价格	500mA,50V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)
CP327V-MPSA13	CENTRAL	获取价格	500mA,30V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)