Datasheet > CP327V-CXTA27

CP327V-CXTA27

更新时间： 2024-11-22 14:55:43

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	458K
描述
500mA,60V Bare die,22.835 X 22.835 mils,Transistor-Small Signal (<=1A)

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技术参数
数据手册

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CP327V-CXTA27 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.75	Base Number Matches：	1

CP327V-CXTA27 数据手册

CP327V-CXTA27

NPN - Darlington Transistor Die

0.5 Amp, 60 Volt

www.centralsemi.com

The CP327V-CXTA27 die is a silicon NPN Darlington power transistor designed for high gain

ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

22.8 x 22.8 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

4.7 x 4.7 MILS

Al-Si – 17,000Å

Au – 9,000Å

1.8 MILS

5 INCHES

Gross Die Per Wafer

33,085

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Emitter Voltage

SYMBOL

UNITS

CES

Emitter-Base Voltage

EBO

Continuous Collector Current

Operating and Storage Junction Temperature

0.5

-65 to +150

°C

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=50V

=10V

100

CBO

CES

EBO

500

100

I =100µA

CBO

CES

I =100µA

I =100mA, I =0.1mA

1.5

2.0

CE(SAT)

BE(ON)

=5.0V, I =100mA

=5.0V, I =10mA

10K

125

=5.0V, I =100mA

=5.0V, I =10mA, f=100MHz

MHz

R1 (30-October 2019)

12 3 4

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