Datasheet > CP327V-2N5308

CP327V-2N5308

更新时间： 2024-09-13 20:11:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	546K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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CP327V-2N5308 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

CP327V-2N5308 数据手册

CP327V-2N5308

NPN - Darlington Transistor Die

0.3 Amp, 40 Volt

www.centralsemi.com

The CP327V-2N5308 die is a silicon NPN Darlington power transistor designed for high gain

ampliﬁer applications.

MECHANICAL SPECIFICATIONS:

Die Size

22.8 x 22.8 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

4.7 x 4.7 MILS

Al-Si – 17,000Å

Au – 9,000Å

1.8 mils

5 INCHES

Gross Die Per Wafer

33,085

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

300

°C

500

Continuous Base Current

Operating and Storage Junction Temperature

100

T , T

stg

-65 to +150

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=40V

100

CBO

EBO

=12V

100

I =10µA

CBO

CEO

I =10mA

I =10µA

EBO

I =200mA, I =200µA

1.4

1.6

CE(SAT)

BE(SAT)

BE(ON)

I =200mA, I =200µA

=5.0V, I =200mA

1.5

=5.0V, I =2.0mA

7.0K

20K

70K

=5.0V, I =100mA

=5.0V, I =2.0mA, f=1.0kHz

7.0K

15.6

|h |

=5.0V, I =2.0mA, f=10MHz

MHz

=5.0V, I =2.0mA, f=1.0kHz

650

=5.0V, I =2.0mA, f=10MHz

=10V, f=1.0MHz

=0.5V, f=1.0MHz

R0 (30-October 2019)

12 3 4

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