Datasheet > CP328X-7002AE

CP328X-7002AE

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	814K
描述
Bare die,15.700 X 15.700 mils,N-Chan Enhancement Mode MOSFET

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CP328X-7002AE 数据手册

CP328X-7002AE

N-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP328X-7002AE is a silicon N-Channel MOSFET designed for high speed pulsed ampliﬁer

and driver applications.

MECHANICAL SPECIFICATIONS:

Die Size

15.7 x 15.7 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.9 x 3.9 MILS

9.1 x 8.1 MILS

Al-Si – 35,000Å

Au – 9,000Å

1.97 MILS

6 INCHES

Gross Die Per Wafer

95,200

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

Operating and Storage Junction Temperature

300

°C

800

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=20V, V =0

μA

GSSF GSSR

=60V, V =0

100

DSS

=0, I =10μA

1.2

0.5

DSS

GS(th)

=V , I =250μA

1.5

2.0

1.1

1.4

1.8

6.0

DS GS

=0, I =115mA, tp=380μs

=10V, I =500mA, tp=380μs

1.0

1.1

3.0

DS(ON)

=5.0V, I =100mA, tp=380μs

=2.5V, I =10mA, tp=380μs

=10V, I =200mA

220

=25V, V =0, f=1.0MHz

5.0

rss

iss

=25V, V =0, f=1.0MHz

oss

=10V, V =4.5V, I =200mA

0.5

0.2

g(tot)

=10V, V =4.5V, I =200mA

0.14

=30V, V =10V, I =200mA

off

R =25Ω, R =150Ω

R0 (23-August 2018)

12 3 4

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