Datasheet > CP324X-7002A

CP324X-7002A

更新时间： 2024-10-31 14:53:31

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	624K
描述
Bare die,21.650 X 21.650 mils,N-Chan Enhancement Mode MOSFET

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CP324X-7002A 数据手册

PROCESS CP324X

Small Signal MOSFET Transistor

N-Channel Enhancement-Mode Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

21.6 x 21.6 MILS

5.9 MILS

Die Size

Die Thickness

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.5 x 5.5 MILS

5.9 x 13.8 MILS

Al - 30,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

33,500

PRINCIPAL DEVICE TYPES

2N7002

GATE

SOURCE

BACKSIDE DRAIN

R0 (30-August 2011)

www.centralsemi.com

12 3 4

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