Datasheet > CP325V-2N5320

CP325V-2N5320

更新时间： 2024-10-31 14:50:47

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	855K
描述
75V,2A,10W Bare die,40.160 X 40.160 mils,Transistor-Bipolar Power (>1A)

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CP325V-2N5320 数据手册

PROCESS CP325V

Small Signal Transistor

NPN - Switching Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

40 x 40 MILS

7.1 MILS

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

7.9 x 8.7 MILS

9.0 x 14 MILS

Al - 30,000Å

Au - 18,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

6,936

GROSS DIE PER 5 INCH WAFER

10,454

PRINCIPAL DEVICE TYPE

2N5320

R2 (19-September 2011)

www.centralsemi.com

12 3 4

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