Datasheet > CP324X-2N7002-WR

CP324X-2N7002-WR

更新时间： 2024-10-30 15:29:47

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CP324X-2N7002-WR 技术参数

PROCESS CP324X

Small Signal MOSFET Transistor

N-Channel Enhancement-Mode Transistor Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

21.6 x 21.6 MILS

5.9 MILS

Die Size

Die Thickness

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.5 x 5.5 MILS

5.9 x 13.8 MILS

Al - 30,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

33,500

PRINCIPAL DEVICE TYPES

2N7002

GATE

SOURCE

BACKSIDE DRAIN

R0 (30-August 2011)

www.centralsemi.com

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