Datasheet > CMT02N60N251

CMT02N60N251

更新时间： 2024-11-17 22:28:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
7页	380K
描述
POWER FIELD EFFECT TRANSISTOR

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CMT02N60N251 数据手册

CMT02N60

P^OWERFIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination ꢀ

scheme to provide enhanced voltage-blocking capability ꢀ

without degrading performance over time. In addition, this ꢀ

advanced MOSFET is designed to withstand high energy in

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

avalanche and commutation modes. The new energy

ꢀ

Diode is Characterized for Use in Bridge Circuits

efficient design also offers a drain-to-source diode with a ꢀ

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

_DSSand V_DS(on) Specified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Front View

TO-252

Front View

TO-251

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed

Symbol

I_D

Value

2.0

Unit

I_DM

9.0

Gate-to-Source Voltage － Continue

－ Non-repetitive

V_GS

V_GSM

P_D

±20

±40

Total Power Dissipation

Derate above 25℃

0.4

W/℃

℃

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_L= 2A, L = 10mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

－ Junction to Ambient

T_J, T_STG

E_AS

-55 to 150

θ_JC

θ_JA

T_L

1.0

62.5

260

℃/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

℃

2004/12/01 Rev. 1.2

Champion Microelectronic Corporation

Page 1

12 3 4 5 6 7

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