Datasheet > CMT04N60N220

CMT04N60N220

更新时间： 2024-11-17 22:28:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
7页	332K
描述
POWER MOSFET

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数据手册

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CMT04N60N220 数据手册

CMT04N60

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This advanced high voltage MOSFET is designed to

ꢀ

Higher Current Rating

withstand high energy in the avalanche mode and switch ꢀ

efficiently. This new high energy device also offers a

drain-to-source diode with fast recovery time. Designed for ꢀ

high voltage, high speed switching applications such as ꢀ

Lower Rds(on)

ꢀ

Lower Capacitances

Lower Total Gate Charge

Tighter VSD Specifications

power supplies, converters, power motor controls and

bridge circuits.

ꢀ

Avalanche Energy Specified

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed

Symbol

I_D

Value

Unit

4.0

I_DM

Gate-to-Source Voltage － Continue

－ Non-repetitive

Total Power Dissipation

V_GS

V_GSM

P_D

±20

±40

TO-220

TO-220FP

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_L= 4A, L = 10mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

－ Junction to Ambient

T_J, T_STG

E_AS

-55 to 150

℃

θ_JC

θ_JA

T_L

1.30

100

260

℃/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

℃

2003/06/25 Preliminary ^{Rev. 1.1}

Champion Microelectronic Corporation

Page 1

12 3 4 5 6 7

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