CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Top View
D
G
S
2
3
1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
- Pulsed
Symbol
ID
Value
Unit
4.0
14
A
IDM
Gate-to-Source Voltage - Continue
- Non-repetitive
VGS
VGSM
PD
±30
±40
V
V
Total Power Dissipation
W
TO-220
83
30
TO-220FP
℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
TJ, TSTG
EAS
-55 to 150
80
mJ
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω)
Thermal Resistance - Junction to Case
- Junction to Ambient
℃/W
θJC
θJA
TL
1.30
100
260
℃
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2009/07/20 Rev. 1.4
Champion Microelectronic Corporation
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