Datasheet > CMT05N50_06

CMT05N50_06

更新时间： 2024-11-18 06:48:15

品牌	Logo	应用领域
虹冠电子 - CHAMP		/
页数	文件大小	规格书
5页	230K
描述
POWER MOSFET

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中文翻译

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数据手册

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CMT05N50_06 数据手册

CMT05N50

P^OWERMOSFET

GENERAL DESCRIPTION

FEATURES

This Power MOSFET is designed for low voltage, high

speed power switching applications such as switching

regulators, conveters, solenoid and relay drivers.

Higher Current Rating

Lower r_DS(ON), Lower Capacitances

Lower Total Gate Charge

Tighter VSD Specifications

Avalanche Energy Specified

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Top View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

CMT05N50N220

Package

TO-220

CMT05N50N220FP

TO-220FP

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed (Note 1)

Symbol

I_D

Value

Unit

5.0

I_DM

Gate-to-Source Voltage － Continue

Total Power Dissipation

V_GS

P_D

±20

Derate above 25℃

0.77

125

W/℃

Single Pulse Avalanche Energy (Note 2)

Operating and Storage Temperature Range

Thermal Resistance － Junction to Case

－ Junction to Ambient

E_AS

T_J, T_STG

θ_JC

-55 to 150

1.70

℃

℃/W

θ_JA

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_L

300

℃

2006/10/11 Rev. 1.1

Champion Microelectronic Corporation

Page 1

12 3 4 5

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