Datasheet > CMT06N60_06

CMT06N60_06

更新时间： 2024-11-18 06:48:15

品牌	Logo	应用领域
虹冠电子 - CHAMP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	227K
描述
POWER FIELD EFFECT TRANSISTOR

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

CMT06N60_06 数据手册

CMT06N60

P^OWERFIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

_DSSSpecified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Front View

N-Channel MOSFET

2006/10/11 Rev. 1.2

Champion Microelectronic Corporation

Page 1

12 3 4 5 6

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
CMT06N60N220	CHAMP	获取价格	POWER FIELD EFFECT TRANSISTOR
CMT06N60N220FP	CHAMP	获取价格	POWER FIELD EFFECT TRANSISTOR
CMT0704	CANOPUS	获取价格	Magnetic Transducer (AC)
CMT0704A2730NP	CANOPUS	获取价格	Magnetic Transducer (AC)
CMT0760FP	ETC	获取价格	POWER FIELD EFFECT TRANSISTOR
CMT07N60	ETC	获取价格	POWER FIELD EFFECT TRANSISTOR
CMT08N50	CHAMP	获取价格	POWER FIELD EFFECT TRANSISTOR
CMT08N50_09	CHAMP	获取价格	POWER FIELD EFFECT TRANSISTOR
CMT08N50GN220	CHAMP	获取价格	POWER FIELD EFFECT TRANSISTOR
CMT08N50GN220FP	CHAMP	获取价格	POWER FIELD EFFECT TRANSISTOR