Datasheet > CMT06N60N220FP

CMT06N60N220FP

更新时间： 2024-11-21 03:26:07

品牌	Logo	应用领域
虹冠电子 - CHAMP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	193K
描述
POWER FIELD EFFECT TRANSISTOR

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CMT06N60N220FP 技术参数

CMT06N60

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination ꢀ

scheme to provide enhanced voltage-blocking capability ꢀ

without degrading performance over time. In addition, this ꢀ

advanced MOSFET is designed to withstand high energy in

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

avalanche and commutation modes. The new energy

ꢀ

Diode is Characterized for Use in Bridge Circuits

I_DSSSpecified at Elevated Temperature

efficient design also offers a drain-to-source diode with a ꢀ

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Front View

N-Channel MOSFET

2003/06/19 Preliminary ^{Rev. 1.1}

Champion Microelectronic Corporation

Page 1

12 3 4 5 6

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