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CMT06N60 PDF预览

CMT06N60

更新时间: 2024-11-18 03:26:07
品牌 Logo 应用领域
虹冠电子 - CHAMP 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
6页 193K
描述
POWER FIELD EFFECT TRANSISTOR

CMT06N60 数据手册

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CMT06N60  
POWER FIELD EFFECT TRANSISTOR  
GENERAL DESCRIPTION  
FEATURES  
This high voltage MOSFET uses an advanced termination ꢀ  
scheme to provide enhanced voltage-blocking capability ꢀ  
without degrading performance over time. In addition, this ꢀ  
advanced MOSFET is designed to withstand high energy in  
Robust High Voltage Termination  
Avalanche Energy Specified  
Source-to-Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
avalanche and commutation modes. The new energy  
Diode is Characterized for Use in Bridge Circuits  
IDSS Specified at Elevated Temperature  
efficient design also offers a drain-to-source diode with a ꢀ  
fast recovery time. Designed for high voltage, high speed  
switching applications in power supplies, converters and  
PWM motor controls, these devices are particularly well  
suited for bridge circuits where diode speed and  
commutating safe operating areas are critical and offer  
additional and safety margin against unexpected voltage  
transients.  
PIN CONFIGURATION  
SYMBOL  
TO-220/TO-220FP  
Front View  
D
G
S
2
3
1
N-Channel MOSFET  
2003/06/19 Preliminary Rev. 1.1  
Champion Microelectronic Corporation  
Page 1  

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