Datasheet > CMT04N60_11

CMT04N60_11

更新时间： 2024-11-18 07:09:07

品牌	Logo	应用领域
虹冠电子 - CHAMP		/
页数	文件大小	规格书
8页	342K
描述
POWER MOSFET

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中文翻译

获取价格

数据手册

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CMT04N60_11 数据手册

CMT04N60

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This advanced high voltage MOSFET is designed to

withstand high energy in the avalanche mode and switch

efficiently. This new high energy device also offers a

drain-to-source diode with fast recovery time. Designed for

high voltage, high speed switching applications such as

power supplies, converters, power motor controls and

bridge circuits.

Higher Current Rating

Lower Rds(on)

Lower Capacitances

Lower Total Gate Charge

Tighter VSD Specifications

Avalanche Energy Specified

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Front View

TO-252

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed

Symbol

I_D

Value

Unit

4.0

I_DM

Gate-to-Source Voltage － Continue

－ Non-repetitive

V_GS

V_GSM

P_D

±30

±40

Total Power Dissipation

TO-220

TO-220FP

℃

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

T_J, T_STG

E_AS

-55 to 150

(V_DD= 100V, V_GS= 10V, I_L= 4A, L = 10mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

－ Junction to Ambient

℃/W

θ_JC

θ_JA

T_L

1.30

100

260

℃

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

2011/03/23 Rev. 1.5

Champion Microelectronic Corporation

Page 1

12 3 4 5 6 7 8

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