Datasheet > CMT02N60XN252

CMT02N60XN252

更新时间： 2024-11-18 07:09:07

品牌	Logo	应用领域
虹冠电子 - CHAMP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
7页	236K
描述
POWER FIELD EFFECT TRANSISTOR

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技术参数
数据手册

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CMT02N60XN252 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

CMT02N60XN252 数据手册

CMT02N60

P^OWERFIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

_DSSand V_DS(on) Specified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Front View

TO-251

Front View

TO-252

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed

Symbol

I_D

Value

2.0

Unit

I_DM

4.0

Gate-to-Source Voltage － Continue

－ Non-repetitive

V_GS

±20

±40

V_GSM

P_D(Max)

Total Power Dissipation

TO-251

TO-220

TO-220FP

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_L= 2A, L = 10mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

－ Junction to Ambient

T_J, T_STG

E_AS

-55 to 150

℃

θ_JC

θ_JA

T_L

1.0

62.5

260

℃/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

℃

2010/12/21 Rev. 1.5

Champion Microelectronic Corporation

Page 1

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