Datasheet > CMN30608TF5AD

CMN30608TF5AD

更新时间： 2024-11-05 17:15:27

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
8页	1743K
描述
DFN5x6

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CMN30608TF5AD 数据手册

CMN30608TF5AD

N-Channel 30V (D-S) Power MOSFET

Description

Applications

The CMN30608TF5AD is the N-Channel enhancement

mode power field effect transistors with high cell density,

trench technology. This high density process and design

have been optimized switching performance and especial-

ly tailored to minimize on-state resistance.



Battery management

Power management

Load switch

Features

Marking Information



VDS(Q1): 30V

ID(Q1): 41A

Marking Code = N30608TF5AD

Date Code = XXXX

RDS_ON(@VGS=10V,Q1) : < 7.8mΩ

RDS_ON(@VGS=10V,Q1) : < 13mΩ

VDS(Q2): 30V

N30608TF5AD

XXXX

ID(Q2): 74A

RDS_ON(@VGS=10V,Q1) : < 5mΩ

RDS_ON(@VGS=10V,Q1) : < 7.8mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

Part Number

Packaging

Reel Size

Top View

Bottom View

CMN30608TF5AD 5000/Tape & Reel

13 inch

G2 S2 S2 S2

S2 S2 S2 G2

S1/D2

G1 D1 D1 D1

D1 D1 D1 G1

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum Q1 Maximum Q2

Unit

Drain-source Voltage

Gate-source Voltage

±20

VGS

TC=25°C

TC=100°C

TA=25°C

TA=100°C

Drain Current⁽¹⁾⁽⁶⁾

Pulsed Drain Current⁽³⁾

IDM

147

TC=25°C

TA=25°C

1.9

Total Power Dissipation⁽⁴⁾

Thermal Resistance Junction-to-Ambient⁽²⁾⁽⁵⁾

RθJA

RθJc

°C/W

Thermal Resistance Junction-to-Case

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

°C

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