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CMN4002F5 PDF预览

CMN4002F5

更新时间: 2024-11-06 17:15:43
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DFN5x6

CMN4002F5 数据手册

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CMN4002F5  
N-Channel 40V (D-S) Power MOSFET  
Description  
Applications  
The CMN4002F5 is the N-Channel enhancement mode  
power field effect transistors with high cell density, trench  
technology. This high density process and design have  
been optimized switching performance and especially tai-  
lored to minimize on-state resistance.  
Battery management  
Power management  
Load switch  
Marking Information  
Features  
VDS: 40V  
ID: 145A  
Marking Code =N4002F5  
Date Code = XXXX  
RDSON (@VGS=10V) : < 2.2mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
N4002F5  
XXXX  
Equivalent Circuit and Pin Configuration  
Ordering Information  
Top View  
Bottom View  
Part Number  
Packaging  
5000/Tape & Reel  
Reel Size  
CMN4002F5  
13 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
Maximum  
40  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
±20  
145  
87  
V
TC=25°C  
TC=100°C  
TA=25°C  
A
ID  
A
Drain Current(1)(6)  
41  
A
ID  
TA=100°C  
25  
A
Pulsed Drain Current(3)  
Avalanche Energy(3)  
IDM  
289  
A
L=5mH  
EAS  
600  
78  
mJ  
W
TC=25°C  
TA=25°C  
Total Power Dissipation(4)  
PD  
6.3  
20  
W
Thermal Resistance Junction-to-Ambient(2)(5)  
Thermal Resistance Junction-to-Case  
Junction and Storage Temperature Range  
RθJA  
RθJC  
°C/W  
1.6  
°C/W  
°C  
TJ,TSTG  
-55 to +150  
Revision_1.2  
1 of 5  
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