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CMN4015S9 PDF预览

CMN4015S9

更新时间: 2024-11-06 17:15:39
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1204K
描述
SOT-89

CMN4015S9 数据手册

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CMN4015S9  
N-Channel 40V(D-S) Power MOSFET  
Description  
Applications  
CMN4015S9 is the N-Channel enhancement mode power  
field effect transistors with high cell density, trench tech-  
nology. This high density process and design have been  
optimized switching performance and especially tailored to  
minimize on-state resistance.  
Cellular Handsets and Accessories  
Personal Digital Assistants  
Portable Instrumentation  
Load switch  
Marking Information  
Features  
D
VDS: 40V  
Device Code = N4015S9  
Date Code = XXXX  
ID: 9A  
N4015S9  
XXXX  
RDSON (@VGS=10V) : < 17mΩ  
RDSON (@VGS=4.5V) : < 23mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
G
D
S
Ordering Information  
Equivalent Circuit and Pin Configuration  
SOT-89 (Top View)  
Part Number  
Packaging  
Reel Size  
CMN4015S9 1000/Tape & Reel  
7 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
VDS  
Maximum  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
40  
VGS  
±20  
V
TA=25°C  
TA=70°C  
9
A
Continuous Drain Current  
Pulsed Drain Current(1)  
ID  
7
A
IDM  
PD  
36  
1.8  
A
Total Power Dissipation @ TA=25°C (2)  
Thermal Resistance Junction-to-Ambient (2)  
Junction and Storage Temperature Range  
W
RθJA  
70  
°C/W  
°C  
TJ,TSTG  
-55 to +150  
Oct. 2020, Rev. 0.0  
1 of 5  
www.appliedpowermicro.com  

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