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CMN4012S9 PDF预览

CMN4012S9

更新时间: 2024-11-21 17:15:39
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1205K
描述
SOT-89

CMN4012S9 数据手册

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CMN4012S9  
N-Channel 40V(D-S) Power MOSFET  
Description  
Applications  
CMN4012S9 is the N-Channel enhancement mode power  
field effect transistors with high cell density, trench tech-  
nology. This high density process and design have been  
optimized switching performance and especially tailored to  
minimize on-state resistance.  
Cellular Handsets and Accessories  
Personal Digital Assistants  
Portable Instrumentation  
Load switch  
Marking Information  
Features  
D
VDS: 40V  
Device Code = N4012S9  
Date Code = XXXX  
ID: 23.6A  
N4012S9  
XXXX  
RDSON (@VGS=10V) : < 15mΩ  
RDSON (@VGS=4.5V) : < 23mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
G
D
S
Ordering Information  
Equivalent Circuit and Pin Configuration  
SOT-89 (Top View)  
Part Number  
Packaging  
Reel Size  
CMN4012S9 1000/Tape & Reel  
7 inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
VDS  
Maximum  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
40  
VGS  
±20  
V
TC=25°C  
TC=70°C  
TA=25°C  
TA=70°C  
23.6  
19  
Continuous Drain Current(1)(6)  
ID  
A
9
7
Pulsed Drain Current(3)  
IDM  
PD  
36  
12.5  
A
Total Power Dissipation @ TC=25°C (4)  
Total Power Dissipation @ TA=25°C (4)  
Thermal Resistance Junction-to-Ambient (2)(5)  
Thermal Resistance Junction-to-Case  
Junction and Storage Temperature Range  
W
1.8  
RθJA  
RθJC  
70  
°C/W  
°C/W  
°C  
10  
TJ,TSTG  
-55 to +150  
Jun. 2021, Rev. 1.0  
1 of 5  
www.appliedpowermicro.com  

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