Datasheet > CMN4005SB

CMN4005SB

更新时间： 2024-11-06 17:15:51

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1193K
描述
TO-263

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CMN4005SB 数据手册

CMN4005SB

N-Channel 40V (D-S) Power MOSFET

Description

Applications

The CMN4005SB is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Battery management

Power management

Load switch

Marking Information

Features



VDS: 40V

Marking Code=N4005SB

ID: 120A

Date Code = XXXX

N4005SB

XXXX

RDS_ON(@VGS=10V) : < 5mΩ

RDS_ON(@VGS=4.5V) : < 8mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-263

P/N

Package Type

TO-263

Packaging

CMN4005SB

800/Tape & reel

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

TC=25°C

218

154

120

436

417

2.8

Drain Current⁽¹⁾⁽⁶⁾

TC=100°C

TC=25°C (Package Limit)

Pulsed Drain Current⁽³⁾

IDM

Total Power Dissipation⁽⁴⁾

TC=25°C

Derating Factor

W/°C

Thermal Resistance Junction-to-Case

RθJC

0.36

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +175

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