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CMN4005SB PDF预览

CMN4005SB

更新时间: 2024-11-21 17:15:51
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1193K
描述
TO-263

CMN4005SB 数据手册

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CMN4005SB  
N-Channel 40V (D-S) Power MOSFET  
Description  
Applications  
The CMN4005SB is the N-Channel enhancement mode  
power field effect transistors with high cell density, trench  
technology. This high density process and design have  
been optimized switching performance and especially tai-  
lored to minimize on-state resistance.  
Battery management  
Power management  
Load switch  
Marking Information  
Features  
VDS: 40V  
Marking Code=N4005SB  
ID: 120A  
Date Code = XXXX  
N4005SB  
XXXX  
RDSON (@VGS=10V) : < 5mΩ  
RDSON (@VGS=4.5V) : < 8mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Ordering Information  
Equivalent Circuit and Pin Configuration  
TO-263  
P/N  
Package Type  
TO-263  
Packaging  
CMN4005SB  
800/Tape & reel  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
Maximum  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
40  
±20  
V
TC=25°C  
218  
154  
120  
436  
417  
2.8  
A
A
Drain Current(1)(6)  
ID  
TC=100°C  
TC=25°C (Package Limit)  
A
Pulsed Drain Current(3)  
IDM  
PD  
A
W
Total Power Dissipation(4)  
TC=25°C  
Derating Factor  
W/°C  
Thermal Resistance Junction-to-Case  
RθJC  
0.36  
°C/W  
°C  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +175  
Revision_1.0  
1 of 5  
www.appliedpowermicro.com  

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