Datasheet > CMN3110LW

CMN3110LW

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1126K
描述
SOT-323

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中文翻译

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CMN3110LW 数据手册

CMN3110LW

N-Channel 30V (D-S) Power MOSFET

Description

Applications

CMN3110LW is the N-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 30V

Device Code = K2

Date Code = XX

ID: 1.2A

K2XX

RDS_ON(@VGS=10V) : < 192mΩ

RDS_ON(@VGS=4.5V) : < 204mΩ

RDS_ON(@VGS=2.5V) : < 234mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

SOT-323 (Top View)

Part Number

Packaging

Reel Size

CMN3110LW 3000/Tape & Reel

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

±8

VGS

1.2

TA=25°C ,Steady State

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

Total Power Dissipation @ TA=25°C ⁽²⁾

TA=100°C ,Steady State

0.7

IDM

Steady State

401

°C/W

°C

Thermal Resistance Junction-to-Ambient ⁽²⁾

Steady State

RθJA

312

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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