Datasheet > CMN6003GB

CMN6003GB

更新时间： 2024-11-02 17:15:51

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1290K
描述
TO-263

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CMN6003GB 数据手册

CMN6003GB

N-Channel 60V (D-S) Power MOSFET

Description

Applications

The CMN6003GB is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features

Marking Code = N6003GB

Date Code = XXXX



V_DS: 60V

I_D(@V_GS=10V): 125A

N6003GB

RDS_ON(@V_GS=10V) : < 4mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

XXXX

Ordering Information

Equivalent Circuit and Pin Configuration

TO-263

P/N

Package Type Packaging

TO-263 Tape and reel

CMN6003GB

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

Tc=25°C(Silicon Limit)

134

Continuous Drain Current ⁽¹⁾Tc=25°C(Package Limit)

120

Tc=100°C(Silicon Limit)

Pulsed Drain Current⁽²⁾

IDM

268

PD @ Tc=25°C

125

Total Power Dissipation ⁽³⁾

Derating Factor above 25°C

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case

RθJC

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

May. 2023, Rev. 1.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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