Datasheet > CMN6075S9

CMN6075S9

更新时间： 2024-05-23 22:21:53

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1205K
描述
SOT-89

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CMN6075S9 数据手册

CMN6075S9

N-Channel 60V(D-S) Power MOSFET

Description

Applications

CMN6075S9 is the N-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 60V

Device Code = N6075S9

Date Code = XXXX

ID: 3.5A

N6075S9

XXXX

RDS_ON(@VGS=10V) : < 95mΩ

RDS_ON(@VGS=4.5V) : < 115mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

SOT-89 (Top View)

Part Number

Packaging

Reel Size

CMN6075S9 1000/Tape & Reel

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

±20

VGS

TA=25°C

TA=70°C

3.5

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

2.8

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

1.8

RθJA

°C/W

°C

TJ,TSTG

-55 to +150

Aug. 2020, Rev. 1.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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