Datasheet > CMN9006GXP

CMN9006GXP

更新时间： 2024-11-19 17:15:39

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1176K
描述
TO-220

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中文翻译

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数据手册

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CMN9006GXP 数据手册

CMN9006GXP

N-Channel 90V (D-S) Power MOSFET

Description

Applications

The CMN9006GXP is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

CMN9006GXP=Marking Code

XXXX = Date Code



VDS: 90V

ID (@VGS=10V): 105A

N9006GXP

XXXX

RDS_ON(@VGS=10V) : < 7.5mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

P/N

Package Type Packaging

Remark

CMN9006XGP

TO-220

Tube

ROHS

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

Tc=25°C (Silicon Limit)

Tc=100°C (Silicon Limit)

105

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

422

167

Total Power Dissipation ⁽³⁾

1.3

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

0.75

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

May. 2022, Rev. 1.0

1 of 6

www.appliedpowermicro.com

12 3 4 5

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