Datasheet > CMN7006GXP

CMN7006GXP

更新时间： 2024-11-21 17:15:55

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1151K
描述
TO-220

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CMN7006GXP 数据手册

CMN7006GXP

N-Channel 70V (D-S) Power MOSFET

Description

Applications

The CMN7006GXP is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

CMN7006GXP=Marking Code

XXXX = Date Code



VDS: 70V

ID (@VGS=10V): 109A

N7006GXP

XXXX

RDS_ON(@VGS=10V) : < 7mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

P/N

Package Type Packaging

Remark

CMN7006XGP

TO-220

Tube

ROHS

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

Tc=25°C (Silicon Limit)

Tc=100°C (Silicon Limit)

109

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

436

167

Total Power Dissipation ⁽³⁾

1.3

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

0.75

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

May. 2022, Rev. 1.0

1 of 6

www.appliedpowermicro.com

12 3 4 5

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