Datasheet > CMN6505SZ

CMN6505SZ

更新时间： 2024-11-21 17:15:39

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1252K
描述
TO-247

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CMN6505SZ 数据手册

CMN6505SZ

N-Channel 65V (D-S) Power MOSFET

Description

Applications

The CMN6505SZ is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 65V

Marking Code = 60R085Z

Date Code = XXXX

ID: 70A

N6505SZ

XXXX

RDS_ON(@VGS=10V) : < 6mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

TO-247

P/N

Package Type

TO-247

Packaging

CMN6505SZ

Tube

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

Tc=25°C

152

Continuous Drain Current

(1)

Tc=25°C (Package limit)

Tc=100°C (Package limit)

Pulsed Drain Current⁽²⁾

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

609

250

Total Power Dissipation⁽³⁾

2.0

W/°C

°C/W

°C

Thermal Resistance Junction-to-Solder Case ⁽³⁾

0.5

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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