Datasheet > CMN6008GYS8D

CMN6008GYS8D

更新时间： 2024-09-27 17:15:43

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1137K
描述
SO-8

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CMN6008GYS8D 数据手册

CMN6008GYS8D

N-Channel 60V (D-S) Power MOSFET

Description

Applications

The CMN6008GYS8D is the N-Channel enhancement

mode power field effect transistors with high cell density,

trench technology. This high density process and design

have been optimized switching performance and especial-

ly tailored to minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 60V

ID: 9.3A

Marking Code = N6008GYS8D

Date Code = XXXX

N6008GYS8D

XXXX

RDS_ON(@VGS=10V) : < 14.5mΩ

RDS_ON(@VGS=4.5V) : < 17mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

SO-8

Part Number

Packaging

Reel Size

CMN6008GYS8D 4000/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±20

TA=25°C

9.3

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

TA=100°C

5.9

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

RθJA

62.5

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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