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CMN6004GLA PDF预览

CMN6004GLA

更新时间: 2024-05-23 22:23:02
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CMN6004GLA 数据手册

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CMN6004GLA  
N-Channel 60V (D-S) Power MOSFET  
Description  
Applications  
The CMN6004GLA is the N-Channel enhancement mode  
power field effect transistors with high cell density, trench  
technology. This high density process and design have  
been optimized switching performance and especially tai-  
lored to minimize on-state resistance.  
AC/DC load switch  
SMPS  
Notebooks and Handhelds adapter  
UPS Power  
Marking Information  
Features  
Marking Code = N6004GLA  
Date Code = XXXX  
VDS: 60V  
ID (@VGS=10V): 146A  
N6004GLA  
RDSON (@VGS=10V) : < 3.9mΩ  
RDSON (@VGS=4.5V) : < 6.2mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
XXXX  
Ordering Information  
Equivalent Circuit and Pin Configuration  
TOLL  
P/N  
Packaging  
Remark  
PIN 9  
CMN6004GLA  
2000/Tape & Reel  
ROHS  
PIN 1  
PIN 2-8  
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Parameter  
Symbol  
Maximum  
Unit  
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
60  
V
V
±20  
146  
120  
107  
585  
167  
Tc=25°C(Silicon Limit)  
Continuous Drain Current (1) Tc=25°C(Package Limit)  
ID  
A
Tc=100°C (Silicon Limit)  
Pulsed Drain Current(2)  
IDM  
A
PD @ Tc=25°C  
W
Total Power Dissipation (3)  
Derating Factor  
above 25°C  
1.1  
W/°C  
Thermal Resistance Junction-to-Case (3)  
RθJC  
0.9  
°C/W  
°C  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +175  
Jun. 2023, Rev. 1.0  
1 of 5  
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