Datasheet > CMN6012U

CMN6012U

更新时间： 2024-11-02 17:15:35

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1198K
描述
TO-252

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CMN6012U 数据手册

CMN6012U

N-Channel 60V (D-S) Power MOSFET

Description

Applications

The CMN6012U is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features



V_DS: 60V

Marking Code = CMN6012U

Date Code = XXXX

I_D: 50A

N6012U

XXXX

RDS_ON(@V_GS=10V) : < 16mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-252

P/N

Packaging

Remark

CMN6012U 2500/Tape and Reel

ROHS

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±25

Tc=25°C

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Tc=100°C

IDM

200

Tc=25°C

Total Power Dissipation ⁽³⁾

Derating Factor above25°C

0.6

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

RθJC

1.67

-55 to +150

Junction and Storage Temperature Range

TJ,TSTG

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