Datasheet > CMN6006LGSF3

CMN6006LGSF3

更新时间： 2024-11-02 17:15:51

品牌	Logo	应用领域
应能微 - APPLIED POWER		光电二极管
页数	文件大小	规格书
5页	1245K
描述
PDFN3.3x3.3

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CMN6006LGSF3 数据手册

CMN6006LGSF3

N-Channel 60V (D-S) Power MOSFET

Description

Applications

The CMN6006LGSF3 is the N-Channel enhancement

mode power field effect transistors with high cell density,

trench technology. This high density process and design

have been optimized switching performance and especial-

ly tailored to minimize on-state resistance.



Battery management

Power management

Load switch

Marking Information

Features



VDS: 60V

ID: 48A

Marking Code = N6006LGSF3

Date Code = XXXX

RDS_ON(@VGS=10V) : < 7.2mΩ

RDS_ON(@VGS=4.5V) : < 10.5mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

N6006LGSF3

XXXX

Equivalent Circuit and Pin Configuration

Ordering Information

Part Number

Packaging

Reel Size

CMN6006LGSF3 5000/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

TC=25°C

TC=100°C

TA=25°C

TA=100°C

Drain Current⁽¹⁾⁽⁶⁾

Pulsed Drain Current⁽³⁾

IDM

TC=25°C

TA=25°C

Total Power Dissipation⁽⁴⁾

3.1

Thermal Resistance Junction-to-Ambient⁽²⁾⁽⁵⁾

Thermal Resistance Junction-to-Case

Junction and Storage Temperature Range

RθJA

RθJc

4.5

°C/W

°C

TJ,TSTG

-55 to +150

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