Datasheet > CMN6002GP

CMN6002GP

更新时间： 2024-11-21 17:15:27

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1211K
描述
TO-220

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CMN6002GP 数据手册

CMN6002GP

N-Channel 60V (D-S) Power MOSFET

Description

Applications

The CMN6002GP is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features

Marking Code = CMN6002GP

Date Code = XXXX



V_DS: 60V

I_D(@V_GS=10V): 170A

N6002GP

RDS_ON(@V_GS=10V) : < 3.6mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

XXXX

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

P/N

Package Type Packaging

TO-220 Tube

CMN6002GP

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Drain-source Voltage

Symbol

Maximum

Unit

VDS

VGS

±20

Gate-source Voltage

Tc=25°C

170⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

120

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

680

220

1.47

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

0.68

Junction and Storage Temperature Range

TJ,TSTG

-55 to +175

Jul. 2021, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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