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CMN6002GP PDF预览

CMN6002GP

更新时间: 2024-11-02 17:15:27
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应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1211K
描述
TO-220

CMN6002GP 数据手册

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CMN6002GP  
N-Channel 60V (D-S) Power MOSFET  
Description  
Applications  
The CMN6002GP is the N-Channel enhancement mode  
power field effect transistors with high cell density, high  
voltage planar technology. This high density process and  
design have been optimized switching performance and  
especially tailored to minimize on-state resistance.  
AC/DC load switch  
SMPS  
Notebooks and Handhelds adapter  
UPS Power  
Marking Information  
Features  
Marking Code = CMN6002GP  
Date Code = XXXX  
VDS: 60V  
ID (@VGS=10V): 170A  
N6002GP  
RDSON (@VGS=10V) : < 3.6mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
XXXX  
Ordering Information  
Equivalent Circuit and Pin Configuration  
TO-220  
P/N  
Package Type Packaging  
TO-220 Tube  
CMN6002GP  
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Parameter  
Drain-source Voltage  
Symbol  
Maximum  
Unit  
VDS  
VGS  
60  
±20  
V
V
Gate-source Voltage  
Tc=25°C  
170(4)  
A
Continuous Drain Current (1)  
Pulsed Drain Current(2)  
Total Power Dissipation (3)  
ID  
Tc=100°C  
120  
A
IDM  
PD @ Tc=25°C  
Derating Factor above 25°C  
RθJC  
680  
A
220  
W
1.47  
W/°C  
°C/W  
°C  
Thermal Resistance Junction-to-Case (3)  
0.68  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +175  
Jul. 2021, Rev. 1.0  
1 of 5  
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