Datasheet > CMN4004GWP

CMN4004GWP

更新时间： 2024-11-21 17:15:15

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1291K
描述
TO-220

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CMN4004GWP 数据手册

CMN4004GWP

N-Channel 40V (D-S) Power MOSFET

Description

Applications

The CMN4004GWP is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



Battery management

Power management

Load switch

Marking Information

Features



VDS: 40V

Marking Code=N4004GWP

ID: 120A

Date Code = XXXX

N4004GWP

XXXX

RDS_ON(@VGS=10V) : < 3.3mΩ

RDS_ON(@VGS=4.5V) : < 5.2mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

P/N

Package Type Packaging Remark

TO-220 Tube ROHS

CMN4004GWP

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±20

TC=25°C

269

190

120

537

417

2.8

Drain Current⁽¹⁾⁽⁶⁾

TC=100°C

TC=25°C (Package Limit)

Pulsed Drain Current⁽³⁾

IDM

Total Power Dissipation⁽⁴⁾

TC=25°C

Derating Factor

W/°C

Thermal Resistance Junction-to-Case

RθJC

0.36

°C/W

°C

Junction and Storage Temperature Range

TJ,TSTG

-55 to +175

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