Datasheet > CMN6002GF

CMN6002GF

更新时间： 2024-11-02 17:15:31

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1207K
描述
TO-220F

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CMN6002GF 数据手册

CMN6002GF

N-Channel 60V (D-S) Power MOSFET

Description

Applications

The CMN6002GF is the N-Channel enhancement mode

power field effect transistors with high cell density, trench

technology. This high density process and design have

been optimized switching performance and especially tai-

lored to minimize on-state resistance.



AC/DC load switch

SMPS

Notebooks and Handhelds adapter

UPS Power

Marking Information

Features

Marking Code = N6002GF

Date Code = XXXX



V_DS: 60V

I_D(@V_GS=10V): 77A

N6002GF

RDS_ON(@V_GS=10V) : < 3.6mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

XXXX

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220F

P/N

Package Type Packaging

TO-220F Tube

CMN6002GF

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Drain-source Voltage

Symbol

Maximum

Unit

VDS

VGS

±20

Gate-source Voltage

Tc=25°C

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

306

0.27

3.7

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Aug. 2022, Rev. 0.0

1 of 5

www.appliedpowermicro.com

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