CMBT3904E

更新时间： 2024-02-29 19:03:33

品牌	Logo	应用领域
CENTRAL		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
2页	205K
描述
COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS

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中文翻译

获取价格

技术参数
数据手册

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CMBT3904E 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.1 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	300 MHz
Base Number Matches：	1

CMBT3904E 数据手册

CMBT3904E NPN

CMBT3906E PNP

Central

ENHANCED SPECIFICATION

COMPLEMENTARY FEMTOmini^TM

SILICON TRANSISTORS

Semiconductor Corp.

ELECTRICAL CHARACTERISTICS (continued)

NPN

TYP

PNP

TYP

SYMBOL TEST CONDITIONS

MIN

MAX

UNITS

=1.0V, I =0.1mA

240

235

215

110

130

150

120

♦

=1.0V, I =1.0mA

100

=1.0V, I =10mA

300

=1.0V, I =50mA

♦

=1.0V, I =100mA

=20V, I =10mA, f=100MHz

300

MHz

=5.0V, I =0, f=1.0MHz

4.0

8.0

=0.5V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

1.0

0.1

100

1.0

kΩ

-4

=10V, I =1.0mA, f=1.0kHz

X10

=10V, I =1.0mA, f=1.0kHz

400

=10V, I =1.0mA, f=1.0kHz

µmhos

=5.0V, I =100µA, R =1.0kΩ,

4.0

f=10Hz to 15.7kHz

=3.0V, V =0.5V, I =10mA, I =1.0mA

BE B1

=3.0V, V =0.5V, I =10mA, I =1.0mA

BE B1

=3.0V, I =10mA, I =I =1.0mA

B1 B2

200

=3.0V, I =10mA, I =I =1.0mA

B1 B2

♦ Enhanced specification.

SOT-923 - MECHANICAL OUTLINE

LEAD CODE:

1) BASE

2) EMITTER

3) COLLECTOR

R0 (17-April 2007)

中文翻译

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