Datasheet > CM65R160P

CM65R160P

更新时间： 2024-11-29 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
7页	1352K
描述
TO-220

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CM65R160P 数据手册

CM65R160P/F

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM65R160P/F is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage Super Junction technology. This high density pro-

cess and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance.



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

65R160X

XXXX

ID (@VGS=10V): 23A

RDS_ON(@VGS=10V) : < 160mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

P/N

Package Type

Packaging

Tube

TO-220

TO-220F

CM65R160P

CM65R160F

TO-220

TO-220F

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM65R160P CM65R160F

VDS

VGS

650

±30

Gate-source Voltage

Tc=25°C

23⁴⁾

15⁽⁴⁾

92⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

227

1.8

0.55

0.3

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

3.6

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

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