Datasheet > CM65R550FF

CM65R550FF

更新时间： 2024-11-29 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
6页	1339K
描述
TO-220F

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CM65R550FF 数据手册

CM65R550FP/F

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM65R550FP/F is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage Super Junction technology. This high density

process and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance.



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

65R550FX

XXXX

ID (@VGS=10V): 7.7A

RDS_ON(@VGS=10V) : < 600mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Low Qrr/Trr with fast diode recovery capability

Ordering Information

Equivalent Circuit and Pin Configuration

TO-220

TO-220F

P/N

Package Type Packaging

CM65R550FP

CM65R550FF

TO-220

Tube

TO-220F

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM65R550FP CM65R550FF

VDS

VGS

650

±30

Gate-source Voltage

Tc=25°C

7.7

4.8

7.7⁴⁾

4.8⁽⁴⁾

31⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

0.8

1.3

0.3

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

3.6

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Oct. 2021, Rev. 1.0

1 of 6

www.appliedpowermicro.com

12 3 4 5 6

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