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CM65R640XU PDF预览

CM65R640XU

更新时间: 2024-11-29 17:15:03
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
6页 1301K
描述
TO-252

CM65R640XU 数据手册

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CM65R640XU/D  
N-Channel 650V (D-S) Power MOSFET  
Description  
Applications  
The CM65R640XU/D is the N-Channel enhancement  
mode power field effect transistors with high cell density,  
high voltage Super Junction technology. This high density  
process and design have been optimized switching perfor-  
mance and especially tailored to minimize on-state re-  
sistance, .  
AC/DC load switch  
SMPS  
LED power  
Marking Information  
Features  
X=Package type  
VDS: 650V  
XXXX = Marking Code  
65R640XX  
XXXX  
ID (@VGS=10V): 7A  
RDSON (@VGS=10V) : < 615mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Ordering Information  
Equivalent Circuit and Pin Configuration  
P/N  
Package Type Packaging  
CM65R640XU  
CM65R640XD  
TO-252  
TO-251  
Tape and reel  
Tube  
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Maximum  
Parameter  
Drain-source Voltage  
Symbol  
Unit  
CM65R640XU CM65R640XD  
VDS  
VGS  
650  
V
V
Gate-source Voltage  
±30  
Tc=25°C  
7
4.4  
A
Continuous Drain Current (1)  
Pulsed Drain Current (2)  
Total Power Dissipation (3)  
ID  
Tc=100°C  
A
IDM  
PD @ Tc=25°C  
Derating Factor above 25°C  
RθJC  
28  
A
69  
W
0.56  
1.8  
W/°C  
°C/W  
°C  
Thermal Resistance Junction-to-Case (3)  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
Revision_1.0  
1 of 6  
www.appliedpowermicro.com  

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