Datasheet > CM65R600PS32

CM65R600PS32

更新时间： 2024-11-29 17:15:47

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1312K
描述
SOT-223-2L

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CM65R600PS32 数据手册

CM65R600PS32

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM65R600PS32 is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage Super Junction technology. This high density

process and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 650V

Device Code = 65R600PS32

Date Code = XXXX

65R600PS32

XXXX

ID: 6A

RDS_ON(@VGS=10V) : < 600mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

SOT-223-2L

Ordering Information

Part Number

Packaging

Reel Size

CM65R600PS32 4000/Tape & Reel

13 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

650

±30

Tc=25°C

6.0

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation

Tc=100°C

3.8

IDM

PD @ Tc=25°C

Derating Factor above 25°C

0.43

2.3

W/°C

°C/W

°C

Thermal Resistance Junction-to-Solder Case ⁽³⁾

Thermal Resistance Junction-to-Solder Point ⁽³⁾

Thermal Resistance Junction-to-Ambient ⁽³⁾

Junction and Storage Temperature Range

RθJC

RθJS

RθJA

TJ,TSTG

-55 to +150

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